Deep reactive ion etching of auxetic structures: present capabilities and challenges

Deep Reactive Ion Etching (DRIE)

Cryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK

Microfabrication of 3D silicon MEMS structures using gray-scale lithography and deep reactive ion etching

Micromachining arbitrary 3D silicon structures for micro-electromechanical systems can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we have investigated the use of deep reactive ion etching (DRIE) and the tailoring of etch selectivity for precise fabrication. Silicon loading, the introduction of an O2 step, wafer electrode power, and wafer temp...

Fabrication of micro/nano dual-scale structures by improved deep reactive ion etching

We present an integrated microand nanofabrication method to create micro/nano dual-scale silicon structures with a controllable sidewall profile over an entire 4 inch wafer. The fabrication is based on an improved Bosch deep reactive ion etching (DRIE) process and its black silicon effect, in which SF6 and C4F8 gases are used as the reactants of etching and passivation, respectively. The result...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...